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  july 2009 doc id 8711 rev 4 1/33 1 vn770k quad smart power solid state relay for complete h-bridge configurations features suited as low voltage bridge linear current limitation very low standby power dissipation short circuit protected status flag diagnostic (open drain) integrated clamping circuits undervoltage protection esd protection description the vn770k is a device formed by three monolithic chips housed in a standard so-28 package: a double high side and two low side switches. both the double high side and low side switches are made using stmicroelectronics vipower? m0-3 technology. this device is suitable to drive a dc motor in a bridge configuration as well as to be used as a quad switch for any lo w voltage application. the dual high side switches have built-in thermal shutdown to protect the chips from over temperature and current limiter blocks to protect the device from short circuit. status output is provided to indicate open load in off and on-state and over temperature. the low side switches are two omnifet ii types (fully auto protected power mosfet in vipower? technology). they have built-in thermal shutdown, linear current limitation and overvoltage clamping. fault feedback for thermal intervention can be detected by monitoring the voltage at the input pin. type r ds(on) i out v cc vn770k 220 m (1) 1. total resistance of one side in bridge configuration 9a (2) 2. typical current limitation value 36 v so-28 table 1. device summary package order codes tube tape and reel so-28 vn770k vn770k13tr www.st.com
contents vn770k 2/33 doc id 8711 rev 4 contents 1 block diagrams and pins descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2 electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.1 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.2 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.3 electrical characteristics for dual high side switch . . . . . . . . . . . . . . . . . . . 9 2.4 electrical characteristics for low side switches . . . . . . . . . . . . . . . . . . . . 11 2.5 dual high-side switch timing data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2.6 electrical characterization for dual high side switch . . . . . . . . . . . . . . . . . 16 2.7 electrical characterization for low side switches . . . . . . . . . . . . . . . . . . . . 19 3 application recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 4 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 4.1 so-28 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 4.2 thermal calculation in clockwise and anti-clockwise operation in steady state mode 27 4.2.1 thermal resistances definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 4.2.2 thermal calculation in transient mode . . . . . . . . . . . . . . . . . . . . . . . . . 27 4.2.3 single pulse thermal impedance definition . . . . . . . . . . . . . . . . . . . . . . 27 4.2.4 pulse calculation formula . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 5 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 5.1 so-28 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 5.2 so-28 tube shipment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 5.3 tape and reel shipment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
vn770k list of tables doc id 8711 rev 4 3/33 list of tables table 1. device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 table 2. pin definition and function. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 table 3. thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 table 4. dual high side switch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 table 5. low side switch. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 table 6. power outputs (per each channel) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 table 7. switching (per each channel) (v cc = 13v) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 8. logic input (per each channel) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 9. status pin (per each channel) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 10. protections (per each channel) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 11. openload detection (per each channel) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 table 12. off-state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 table 13. on-state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 table 14. dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 table 15. switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 table 16. source drain diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 table 17. protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 table 18. truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 table 19. thermal calculation in clockwise and anti -clockwise operation in steady state mode . . . . 27 table 20. thermal parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 table 21. so-28 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 table 22. document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
list of figures vn770k 4/33 doc id 8711 rev 4 list of figures figure 1. block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 figure 2. connection diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 figure 3. switching time waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 figure 4. open-load status timing (with external pull-up) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 figure 5. over temperature status timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 figure 6. off-state output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 figure 7. input clamp voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 figure 8. high level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 figure 9. input high level voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 figure 10. input low level voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 figure 11. input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 figure 12. overvoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 figure 13. i lim vs t case . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 figure 14. turn-on voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 figure 15. turn-off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 figure 16. on-state resistance vs t case . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 figure 17. on-state resistance vs v cc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 figure 18. status leakage current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 figure 19. status low output voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 figure 20. openload on-state detection threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 figure 21. openload off-state voltage detection threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 figure 22. status clamp voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 figure 23. static drain source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 figure 24. derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 figure 25. transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 figure 26. transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 figure 27. turn-on current slope (v in =5v) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 figure 28. turn-on current slope (v in =3.5v) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 figure 29. input voltage vs input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 figure 30. capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 figure 31. switching time resistive load (v in =5v) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 figure 32. switching time resistive load (r g =10ohm) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 figure 33. output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 figure 34. step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 figure 35. source drain diode forward characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 figure 36. static drian source on resistance vs i d . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 figure 37. static drain source on resistance vs input voltage (i d =7a) . . . . . . . . . . . . . . . . . . . . . . . . . 21 figure 38. static drain source on resistance vs input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 figure 39. normalized input threshold voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 figure 40. normalized on resistance vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 figure 41. turn-off drain source voltage slope (v in =3.5v). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 figure 42. turn-off drain source voltage slope (v in =5v) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 figure 43. current limit vs junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 figure 44. application diagram bridge drivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 figure 45. recommended motor operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 figure 46. waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 figure 47. so-28 pc board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 figure 48. chipset configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
vn770k list of figures doc id 8711 rev 4 5/33 figure 49. auto and mutual rthj-amb vs pcb copper area in open box free air condition . . . . . . . . . 26 figure 50. so-28 hsd thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . 28 figure 51. so-28 lsd thermal impedance junction ambient single pulse. . . . . . . . . . . . . . . . . . . . . . 28 figure 52. thermal fitting model of an h-bridge in so-28 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 figure 53. so-28 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 figure 54. tube dimensions (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 figure 55. tape and reel dimensions (suffix ?13tr?) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
block diagrams and pins descriptions vn770k 6/33 doc id 8711 rev 4 1 block diagrams and pins descriptions figure 1. block diagram
vn770k block diagrams and pins descriptions doc id 8711 rev 4 7/33 figure 2. connection diagram table 2. pin definition and function no name function 1, 3, 25, 28 drain 3 drain of switch 3 (low-side switch) 2 input 3 input of switch 3 (low-side switch) 4, 11 n.c. not connected 5, 10, 19, 24 v cc drain of switches 1 and 2 (h igh-side switches) and power supply voltage 6 gnd ground of switches 1 and 2 (high-side switches) 7 input 1 input of switch 1 (high-side switches) 8 diagnostic diagnostic of switc hes 1 and 2 (high-side switches) 9 input 2 input of switch 2 (high-side switch) 12, 14, 15, 18 drain 4 drain of switch 4 (low-side switch) 13 input 4 input of switch 4 (low-side switch) 16, 17 source 4 source of switch 4 (low-side switch) 20, 21 source 2 source of switch 2 (high-side switch) 22, 23 source 1 source of switch 1 (high-side switch) 26, 27 source 3 source of switch 3 (low-side switch)
electrical specifications vn770k 8/33 doc id 8711 rev 4 2 electrical specifications 2.1 thermal data 2.2 absolute maximum ratings table 3. thermal data symbol parameter value max (c/w) r thj-case thermal resistance junction-case (high side switch) 20 r thj-case thermal resistance junction-case (low side switch) 20 r thj-amb thermal resistance junction-ambient (with 6 cm 2 of cu heat sink) see figure 49 table 4. dual high side switch symbol parameter value unit v cc dc supply voltage 41 v -v cc reverse dc supply voltage -0.3 v -i gnd dc reverse ground pin current -200 ma i out dc output current internally limited a -i out reverse dc output current -6 a i in dc input current 10 ma i stat dc status current 10 ma v esd electrostatic discharge (human body model: r = 1.5k ; c = 100pf) ? input ? status ? output ?v cc 4000 4000 5000 5000 v v v v p tot power dissipation (t c =25c) 6 w t j junction operating temperature internally limited c t c case operating temperature -40 to 150 c t stg storage temperature -55 to 150 c table 5. low side switch symbol parameter value unit v ds drain source voltage (v in = 0v) internally clamped v v in input voltage internally clamped v i in input current 20 ma
vn770k electrical specifications doc id 8711 rev 4 9/33 2.3 electrical characteristics for dual high side switch 8v < v cc < 36v; -40c < t j < 150c, unless otherwise specified. r in min minimum input series impedance 150 i d drain current internally limited a i r reverse dc output current -10.5 a v esd1 electrostatic discharge (r = 1.5k , c = 100pf) 4000 v v esd2 electrostatic discharge on output pin only (human body model: r = 330 , c = 150pf) 5000 v p tot power dissipation (t c = 25c) 6 w t j operating junction temperature internally limited c t c case operating temperature internally limited c t stg storage temperature -55 to 150 c table 5. low side switch (continued) symbol parameter value unit table 6. power outputs (per each channel) symbol parameter test cond itions min typ max unit v cc (1) 1. per device. operating supply voltage 5.5 13 36 v v usd (1) undervoltage shutdown 3 4 5.5 v v ov (1) overvoltage shutdown 36 - - v r on on-state resistance i out =1a; t j =25c i out =1a; v cc >8v -- 160 320 m m i s (1) supply current off-state; v cc = 13v; v in =v out =0v off-state; v cc = 13v; v in =v out =0v; t j =25c on-state; v cc = 13v; v in = 5v; i out =0v - 12 12 5 40 25 7 a a ma i l(off1) off-state output current v in =v out =0v 0 - 50 a i l(off2) off-state output current v in =0v; v out =3.5v -75 - 0 a i l(off3 ) off-state output current v in =v out =0v; v cc = 13v; t j = 125c - - 5 a i l(off4) off-state output current v in =v out =0v; v cc = 13v; t j = 25c - - 3 a
electrical specifications vn770k 10/33 doc id 8711 rev 4 table 7. switching (per each channel) (v cc = 13v) symbol parameter test conditions min typ max unit t d(on) turn-on delay time r l =13 from v in rising edge to v out =1.3v - 30 - s t d(off) turn-off delay time r l =13 from v in falling edge to v out = 11.7v - 30 - s dv out /dt (on) turn-on voltage slope r l =13 from v out = 1.3v to v out = 10.4v - (1) 1. see relative diagram -v/s dv out /dt (off) turn-off voltage slope r l =13 from v out = 11.7v to v out =1.3v - (1) -v/s table 8. logic input (per each channel) symbol parameter test conditions min typ max unit v il input low level - - 1.25 v i il low level input current v in = 1.25v 1 - - a v ih input high level 3.25 - - v i ih high level input current v in = 3.25v - - 10 a v i(hyst) input hysteresis voltage 0.5 - - v v icl input clamp voltage i in = 1ma i in = -1ma 6 6.8 -0.7 8 v v table 9. status pin (per each channel) symbol parameter test conditions min typ max unit v stat status low output voltage i stat = 1.6 ma - - 0.5 v i lstat status leakage current normal operation; v stat = 5v - - 10 a c stat status pin input capacitance normal operation; v stat = 5v - - 100 pf v scl status clamp voltage i stat = 1ma i stat = -1ma 6 6.8 -0.7 8v v table 10. protections (per each channel) symbol parameter test conditions min typ max unit t tsd shutdown temperature 150 175 200 c t r reset temperature 135 - - c
vn770k electrical specifications doc id 8711 rev 4 11/33 note: to ensure long term reliability under heavy ov erload or short circuit conditions, protection and related diagnostic signals must be used together with a proper software strategy. if the device is subjected to abnormal conditions, this software must limit the duration and number of activation cycles. 2.4 electrical characteristi cs for low side switches -40c < t j < 150c, unless otherwise specified. t hyst thermal hysteresis 7 15 - c t sdl status delay in overload conditions t j >t tsd - - 20 s i lim current limitation t j = 125c 5.5v < v cc <36v 7 8 10 13 13 13 a a a v demag turn-off output clamp voltage i out =1a; l=6mh v cc -41 v cc -48 v cc -55 v table 10. protections (per each channel) (continued) symbol parameter test conditions min typ max unit table 11. openload detection (per each channel) symbol parameter test conditions min typ max unit i ol openload on-state detection threshold v in = 5v 20 40 80 ma t dol(on) openload on-state detection delay i out = 0a - - 200 s v ol openload off-state voltage detection threshold v in = 0v 1.5 2.5 3.5 v t dol(off) openload detection delay at turn-off - - 1000 s table 12. off-state symbol parameter test conditions min typ max unit v clamp drain source clamp voltage v in =0v; i d = 3.5a 40 45 55 v v clth drain source clamp threshold voltage v in =0v; i d =2ma 36 - - v v inth input threshold voltage v ds =v in ; i d =1ma 0.5 - 2.5 v i iss supply current from input pin v ds =0v; v in = 5v - 100 150 a
electrical specifications vn770k 12/33 doc id 8711 rev 4 t j = 25c, unless otherwise specified. v incl input-source clamp voltage i in =1ma i in =-1ma 6 -1.0 6.8 8 -0.3 v i dss zero input voltage drain current (v in =0v) v ds = 13v; v in =0v; t j =25c v ds = 25v; v in =0v -- 30 75 a table 13. on-state symbol parameter test conditions min typ max unit r ds(on) static drain source on resistance v in =5v; i d =3.5a; t j = 25c v in =5v; i d =3.5a -- 60 120 m table 14. dynamic symbol parameter test conditions min typ max unit g fs (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5% forward trans conductance v dd =13v; i d =3.5a - 9 - s c oss output capacitance v ds = 13v; f = 1 mhz; v in = 0v - 220 - pf table 15. switching symbol parameter test conditions min typ max unit t d(on) turn-on delay time v dd =15v; i d =3.5a v gen =5v; r gen = r in min =150 - 100 300 ns t r rise time - 470 1500 ns t d(off) turn-off delay time - 500 1500 ns t f fall time - 350 1000 ns t d(on) turn-on delay time v dd =15v; i d =3.5a v gen =5v; r gen =2.2k -0.752.3s t r rise time - 4.6 14 s t d(off) turn-off delay time - 5.4 16 s t f fall time - 3.6 11 s (di/dt) on turn-on current slope v dd =15v; i d =3.5a v gen =5v; r gen = r in min =150 -6.5-a/s q i total input charge v dd =12v; i d =3.5a; v in =5v i gen = 2.13ma -18-nc table 12. off-state (continued) symbol parameter test conditions min typ max unit
vn770k electrical specifications doc id 8711 rev 4 13/33 -40c < tj < 150c, unless otherwise specified. table 16. source drain diode symbol parameter test conditions min typ max unit v sd (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd =3.5a; v in =0v - 0.8 - v t rr reverse recovery time i sd = 3.5a; di/dt = 20a/s v dd = 30v; l = 200h -220- ns q rr reverse recovery charge -0.28 - c i rrm reverse recovery current -2.5- a table 17. protections symbol parameter test conditions min typ max unit i lim drain current limit v in =5v; v ds =13v v in =5v; v ds =13v; t j =125c 6 6.5 912 12 a a t dlim step response current limit v in =5v; v ds = 13v - 4 - s t jsh over temperature shutdown 150 175 - c t jrs over temperature reset 135 - - c i gf fault sink current v in = 5v; v ds =13v; t j =t jsh - 15 - ma e as single pulse avalanche energy starting t j =25c; v dd = 24v v in =5v; r gen = r in min =150 ; l=24mh 200 - - mj
electrical specifications vn770k 14/33 doc id 8711 rev 4 2.5 dual high-side switch timing data figure 3. switching time waveforms table 18. truth table conditions input output status normal operation l h l h h h current limitation l h h l x x h (t j < t tsd ) h (t j > t tsd ) l over temperature l h l l h l undervoltage l h l l x x overvoltage l h l l h h output voltage > v ol l h h h l h output current < i ol l h l h h l
vn770k electrical specifications doc id 8711 rev 4 15/33 figure 4. open-load status timing (with external pull-up) figure 5. over temperature status timing
electrical specifications vn770k 16/33 doc id 8711 rev 4 2.6 electrical characterizatio n for dual high side switch figure 6. off-state output current figure 7. input clamp voltage figure 8. high level input current figure 9. input high level voltage figure 10. input low level voltage figure 11. input hysteresis voltage
vn770k electrical specifications doc id 8711 rev 4 17/33 figure 12. overvoltage shutdown figure 13. i lim vs t case figure 14. turn-on voltage slope figure 15. turn-off voltage slope figure 16. on-state resistance vs t case figure 17. on-state resistance vs v cc
electrical specifications vn770k 18/33 doc id 8711 rev 4 figure 18. status leakage current figure 19. status low output voltage figure 20. openload on-state detection threshold figure 21. openload off-state voltage detection threshold figure 22. status clamp voltage
vn770k electrical specifications doc id 8711 rev 4 19/33 2.7 electrical characterizat ion for low side switches figure 23. static drain source on resistance figure 24. derating curve figure 25. transconductance figure 26. transfer characteristics figure 27. turn-on current slope (v in =5v) figure 28. turn-on current slope (v in =3.5v)
electrical specifications vn770k 20/33 doc id 8711 rev 4 figure 29. input voltage vs input charge figure 30. capacitance variations figure 31. switching time resistive load (v in =5v) figure 32. switching time resistive load (r g =10ohm) figure 33. output characteristics figure 34. step response current limit
vn770k electrical specifications doc id 8711 rev 4 21/33 figure 35. source drain diode forward characteristics figure 36. static drian source on resistance vs i d v figure 37. static drain source on resistance vs input voltage (i d =7a) figure 38. static drain source on resistance vs input voltage figure 39. normalized input threshold voltage vs temperature figure 40. normalized on resistance vs temperature
electrical specifications vn770k 22/33 doc id 8711 rev 4 figure 41. turn-off drain source voltage slope (v in =3.5v) figure 42. turn-off drain source voltage slope (v in =5v) figure 43. current limit vs junction temperature
vn770k application recommendations doc id 8711 rev 4 23/33 3 application recommendations figure 44. application diagram bridge drivers most motor bridge drivers use a reverse battery protection diode (d) inside the supply rail. this diode prevents a reverse current flow back to v batt in case the bridge becomes disabled via the logic inputs wh ile motor inductance still carries energy. in order to prevent a hazardous overvoltage at circuit supply terminal (v cc ), a blocking capacitor (c) is needed to limit the voltage overshoot. as basic orientation, 50f per 1a load current is recommended. as an alternative, a zener protection (z) is also suitable. even if a reverse polarity diode is not present, it is recommended to use a capacitor or zener at v cc because a similar problem appears in case the supply terminal of the module has intermittent electrical contact to the battery or gets disconnected while the motor is operating.
application recommendations vn770k 24/33 doc id 8711 rev 4 figure 45. recommend ed motor operation
vn770k application recommendations doc id 8711 rev 4 25/33 figure 46. waveforms
thermal data vn770k 26/33 doc id 8711 rev 4 4 thermal data 4.1 so-28 thermal data figure 47. so-28 pc board note: layout condition of rth and zth measurements (pcb fr4 area = 58mm x 58mm, pcb thickness = 2mm, cu thickness = 35m, copper areas: from minimum pad layout to 6cm 2 ). figure 48. chipset configuration figure 49. auto and mutual rthj-amb vs pcb copper area in open box free air condition (a) a. see definitions in section 5.2 on page 31 low side chip channel 3 r thb low side chip channel 4 r thc high side chip channel 1,2 r tha r thab r thac r thbc
vn770k thermal data doc id 8711 rev 4 27/33 4.2 thermal calculation in clockwise and anti-clockwise operation in steady state mode 4.2.1 thermal resistances definition values according to the pcb heatsink area. r thhs = r thhs1 = r thhs2 = high side chip thermal resistance junction to ambient (hs 1 or hs 2 in on-state) r thls = r thls3 = r thls4 = low side chip thermal resistance junction to ambient r thhsls = r thhs1ls4 = r thhs2ls3 = mutual thermal resistance junction to ambient between high side and low side chips r thlsls = r thls3ls4 = mutual thermal resistance junction to ambient between low side chips 4.2.2 thermal calculation in transient mode (b) t jhs12 = z thhs x p dhs12 + z thhsls x (p dls3 + p dls4 ) + t amb t jls3 = z thhsls x p dhs12 + z thls x p dls3 + z thlsls x p dls4 + t amb t jls4 = z thhsls x p dhs12 + z thlsls x p dls3 + z thls x p dls4 + t amb 4.2.3 single pulse therma l impedance definition values according to the pcb heatsink area. z thhs = high side chip thermal impedance junction to ambient z thls = z thls3 = z thls4 = low side chip thermal impedance junction to ambient z thhsls = z thhs12ls3 = z thhs12ls4 = mutual thermal impedance junction to ambient between high side and low side chips z thlsls = z thls3ls4 = mutual thermal impedance junction to ambient between low side chips 4.2.4 pulse calculation formula where = t p /t table 19. thermal calculation in clockwise and anti-clockwise operation in steady state mode hs 1 hs 2 ls 3 ls 4 t jhs12 t jls3 t jls4 on off off on p dhs1 x r thhs + p dls4 x r thhsls + t amb p dhs1 x r thhsls + p dls4 x r thlsls + t amb p dhs1 x r thhsls + p dls4 x r thls + t amb off on on off p dhs2 x r thhs + p dls3 x r thhsls + t amb p dhs2 x r thhsls + p dls3 x r thls + t amb p dhs2 x r thhsls + p dls3 x r thlsls + t amb b. calculation is valid in any dynamic operating condition. p d values set by user. z th r th z thtp 1 ? () + ? =
thermal data vn770k 28/33 doc id 8711 rev 4 figure 50. so-28 hsd thermal impe dance junction ambi ent single pulse figure 51. so-28 lsd thermal impedance junction ambient single pulse footprint 1 cm 2 2 cm 2 6 cm 2 footprint 1 cm 2 2 cm 2 6 cm 2
vn770k thermal data doc id 8711 rev 4 29/33 figure 52. thermal fitting model of an h-bridge in so-28 table 20. thermal parameters (1) 1. the blank space means that the val ue is the same as the previous one. area/island (cm 2 ) footprint 1 2 6 r1 = r6 (c/w) 2.6 r2 (c/w) 3.5 r12 = r17 (c/w) 3.5 r3 = r13 = r 18 (c/w) 15.5 r4 = r14 = r19 (c/w) 10.5 r5 = r15 = r20 (c/w) 62.28 52.28 44.28 32.28 r7 = r8 = r9 = r10 (c/w) 150 r11 = r16 (c/w) 1.5 c1 = c5 (w.s/c) 0.00025 c2 = c7 = c11 (w.s/c) 0.024 c3 = c8 =c 12 (w.s/c) 0.2 c4 = c9 = c13 (w.s/c) 1.6 1.61 1.7 3.25 c6 = c10 (w.s/c) 0.00075
package mechanical data vn770k 30/33 doc id 8711 rev 4 5 package mechanical data 5.1 so-28 mechanical data figure 53. so-28 package outline table 21. so-28 mechanical data dim mm inch min. typ max. mi n. typ. max. a 2.65 0.104 a1 0.1 0.3 0.004 0.012 b 0.35 0.49 0.013 0.019 b1 0.23 0.32 0.009 0.012 c 0.5 0.020 c1 45 (typ.) d 17.7 18.1 0.697 0.713 e 10 10.65 0.393 0.419 e 1.27 0.050 e3 16.51 0.650 f 7.4 7.6 0.291 0.299 l 0.4 1.27 0.016 0.050 s 8 (max.)
vn770k package mechanical data doc id 8711 rev 4 31/33 5.2 so-28 tube shipment figure 54. tube dimensions (no suffix) 5.3 tape and reel shipment figure 55. tape and reel dimensions (suffix ?13tr?)
revision history vn770k 32/33 doc id 8711 rev 4 6 revision history table 22. document revision history date revision changes 01-dec-2002 1 initial release. 30-jun-2004 2 added thermal characterization revision history table added disclaimers updated (last page) 31-aug-2006 3 document formatted into new st template dimensions updated, see figure 55: tape and reel dimensions (suffix ?13tr?) on page 31 inserted chapter 4: thermal data on page 26 application diagram updated, see figure 44: application diagram bridge drivers on page 23 updated disclaimer (last page) to include a mention about the use of st products in automotive applications 30-jun-2009 4 updated table 3: thermal data . updated note of figure 47: so-28 pc board . updated figure 48: chipset configuration .
vn770k doc id 8711 rev 4 33/33 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in military , air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2009 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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